The over-arching themes of our research efforts are the fields of nanoscience and nanotechnology.

Within these broad themes, my group’s research activities focus upon structure-property relationships in electronic materials, fundamental mechanisms of thin film growth, self-assembly of nanoscaled structures, degradation modes in electronic and optoelectronic devices, the properties of dislocations in semiconductors, nanoscale fabrication techniques, nanoscale tomographic reconstruction techniques, and the theory and application of electron and ion beams.

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• “Lateral control of self-assembled island nucleation by focused-ion-beam-micropatterning”, M. Kammler, R. Hull, M.C. Reuter, and F.M. Ross, Appl. Phys. Lett. 82, 1093 (2003).
• “Control of surface morphology through variation of growth rate in SiGe/Si(100) epitaxial films: Nucleation of quantum fortresses"; J. L. Gray, R. Hull and J.A. Floro, Appl. Phys. Lett. 81, 2445-7 (2002)
• “Precision Placement of Heteroepitaxial Semiconductor Quantum Dots”, R. Hull, J.L. Gray, M. Kammler, S. Atha, P. Kumar, T. Vandervelde, J.C. Bean, J.A. Floro, and F.M. Ross, Mater. Sci. Eng. B101, 1-8 (2003)
• “Misfit Strain Accommodation in SiGe Heterostructures”, R. Hull, in “Germanium Silicon: Physics and Materials” R. Hull and J.C. Bean, eds., Semiconductor and Semimetals Series Vol. 56 (Academic Press, San Diego, CA, 1998), pp102-168
• “Nanoscale Characterization of Stresses in Semiconductor Devices by Quantitative Electron Diffraction”, J. Demarest, R. Hull , K. Schonenberg, and K. Janssens, Appl. Phys. Lett. 77 412-4 (2000)
• “Ultrarapid nanostructuring of poly(methylmethacrylate) films using Ga+ focused ion beams,”Y. Liu, D.M. Longo, and R. Hull , Appl. Phys. Lett. 82, 346-8 (2003)
• "Reconstruction of Three-Dimensional Chemistry and Geometry using Focused Ion Beam Microscopy”, D.N. Dunn and R. Hull, Appl. Phys. Lett., 75, 3414-6 (1999)
• “A new mechanism for dislocation blocking in strained layer epitaxial growth”, E. A. Stach, K.W. Schwarz, R. Hull, F. M. Ross, and R.M. Tromp, Phys. Rev. Lett. 84, 947-50 (2000)

• Fellow, American Physical Society
• Elected, Member of European Academy of Sciences.
• Chair, Gordon Research Conference on Thin Films, 1993
• Elected President of Materials Research Society, 1997
• Chair of Committee of Visitors for NSF Division of Materials Research, 1999

Education

• Ph.D. 1983, Oxford University, Materials Science
• B.S. 1980, Oxford University, Physics

Major Professional Experience

• Professor of Engineering and Department Head, Materials Science and Engineering, Rensselaer Polytechnic Institute
• 01/08-present Visiting Professor, University of Virginia
• 08/02-12/07 Director, University of Virginia Institute for Nanoscale and Quantum Science
• 08/02-12/07 Charles Henderson Professor of Engineering, University of Virginia
• 09/00-present Director, UVa Materials Research Science and Engineering Center
• 06/99-present Professor, Department of Materials Science and Engineering, UVA
• 10/97-08/02 Heinz and Doris Wilsdorf Distinguished Research Chair
• 10/97-present Courtesy appointment in Department of Electrical Engineering, UVA
• 11/94-06/99 Associate Professor, Department of Materials Science and Engineering, UVA
• 12/92-3/93 Visiting Associate Professor, University of Tokyo, Japan (NEC Chair
• 1987-1994 Member of Technical Staff, AT&T Bell Laboratories
• 1985-1987 Member of Technical Staff, Hewlett Packard Laboratories
• 1983-1985: Postdoctoral Member of Technical Staff, AT&T Bell Laboratories

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